super fast recovery diode RF05VA2S ? series ? dimensions (unit : mm) ? land size figure (unit : mm) standard fast recovery ? applications high frequency rectification ? features 1)small mold type. tumd2 ? structure 2)high switching speed 3)low forward voltage ? construction silicon epitaxial planer ? absolute maximum ratings (ti=25 ?c) symbol limits unit v rm 200 v v r 200 v tj 150 ?c tstg ? 55 to ? 150 ?c ? electrical characteristics (tj=25 ?c) symbol min. typ. max. unit forward voltage v f 0.85 0.98 v i r 0.01 10 a trr 11 25 ns reverse voltage repetitive peak reverse voltage parameter conditions junction temperature forward current surge peak i fsm 0.5 6 average rectified forward current io reverse recovery time v r =200v i f =0.5a,i r =1a,irr=0.25i r ? taping dimensions (unit : mm) reverse current parameter storage temperature direct voltage a a conditions i f =0.5a glass epoxy substrate mounted 60hz half sin wave,resistive load 60hz half sin wave, non-repetitive one cycle peak value, tj=25c rohm : tumd2 1.30.05 0.80.05 2.50.2 1.90.1 0.60.2 0.1 0.170.1 0.05 tumd2 1.1 2.0 0.8 0.5 4.00.1 2.00.05 1.550.1 0 1.430.05 4.00.1 1.00.2 0 2.75 3.50.05 1.750.1 8.00.2 0.250.05 0.90.08 2.80.05 dot (year week factory) + day 1/4 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RF05VA2S 0.01 0.1 1 10 300 400 500 600 700 800 900 1000 1100 1200 1300 tj=125 c tj=25 c tj=150 c tj=75 c forward voltage v f (mv) v f - i f characteristics forward current: i f (a) 0 1 10 100 1000 10000 0 50 100 150 200 tj=150 c reverse current: i r (na) reverse voltage v r (v) v r - i r characteristics tj=125 c tj=25 c tj=75 c 1 10 100 0 5 10 15 20 25 30 f=1mhz capacitance between terminals:ct(pf) reverse voltage : v r (v) v r - ct characteristics 800 810 820 830 840 850 860 870 880 890 900 v f dispersion map forward voltage : v f (mv) ave:848.8mv i f =0.5a 1 10 100 reverse current : i r (na) i r dispersion map v r =200v ave:1.8na 20 25 30 ave:24.3pf f=1mhz v r =0v capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RF05VA2S 1 10 100 1 10 100 time i fsm 0 5 10 15 20 25 30 ave:13.7a 8.3ms ifsm 1cyc i fsm dispersion map peak surge forward current : i fsm (a) 0 5 10 15 20 25 30 ave:10.2ns i f =0.5a i r =1a irr=0.25 i r trr dispersion map reverse recovery time:trr(ns) 1 10 100 1 10 100 8.3ms i fsm 1cyc. 8.3ms peak surge forward current : i fsm (a) number of cycles i fsm - cycle characteristics peak surge forward current : i fsm (a) time:t(ms) i fsm - t characteristics 0 5 10 15 20 25 30 ave:28.2kv c=100pf r=1.5k c=200pf r=0 ave:5.9kv electrostatic discharge test esd(kv) esd dispersion map 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - c) rth(j - a) time:t(s) rth - t characteristics transient thermal impedance:rth ( c/w) 3/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RF05VA2S 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0 0.2 0.4 0.6 0.8 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 average rectified forward current:io(a) ambient temperature:ta( c ) derating curve (io - ta) t tj=150 c d=t/t t v r io v r =160v 0a 0v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 average rectified forward current:io(a) case temperature:tl( c) derating curve (io - tl) t tj=150 c d=t/t t v r io v r =160v 0a 0v 4/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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